sot-23 plastic-encapsulate mosfets CJ2305 p-channel 8-v(d-s) mosfet feature trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: s5 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -8 gate-source voltage v gs 8 v continuous drain current i d -4.1 continuous source-drain diode current i s -0.8 a maximum power dissipation p d 0.35 w thermal resistance from junction to ambient ( t 10s) r ja 357 /w junction temperature t j 150 storage temperature t stg -50 ~+150 so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -8 gate-source thre shold voltage v gs(th) v ds =v gs , i d =-250a -0. 5 - 0.9 v gate-source leakage i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =-8v, v gs =0v -1 a v gs =-4.5v, i d =-3.5a 0.045 v gs =-2.5v, i d =-3a 0.060 drain-source on-state resistance a r ds(on) v gs =-1.8v,i d =-2.0a 0.090 ? forward transconductance a g fs v ds =-5v, i d =-4.1a 6 s dynamic input capacitance b,c c iss 740 output capacitance b,c c oss 290 reverse transfer capacitance b,c c rss v ds =-4v,v gs =0v,f =1mhz 190 pf v ds =-4v,v gs =-4.5v, i d =-4.1a 7.8 15 total gate charge b q g 4.5 9 gate-source charge b q gs 1.2 gate-drain charge b q gd v ds =-4v,v gs =-2.5v, i d =-4.1a 1.6 nc gate resistance b,c r g f =1mhz 1.4 7 14 ? turn-on delay time b,c t d(on) 13 20 rise time b,c t r 35 53 turn-off delay time b,c t d(off) 32 48 fall time b,c t f v dd =-4v, r l =1.2 ? , i d -3.3a, v gen =-4.5v,rg=1 ? 10 20 turn-on delay time b,c t d(on) 5 10 rise time b,c t r 11 17 turn-off delay time b,c t d(off) 22 33 fall time b,c t f v dd =-4v, r l =1.2 ? , i d -3.3a, v gen =-8v,rg=1 ? 16 24 ns drain-source body diode characteristics continuous source-drain diode current i s t c =25 -1.4 pulse diode forward current a i sm -10 a body ciode voltage v sd i f =-3.3a -0.8 -1.2 v note : a. pulse test ; pulse width 300s, duty cycle 2%. b. guaranteed by design, not s ubject to production testing. c. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0.0 -0.5 -1.0 -1.5 -2.0 -0 -1 -2 -3 -4 -5 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -4 -8 -12 -16 -0 -3 -6 -9 -12 0 60 120 180 240 300 -0 -2 -4 -6 -8 0 100 200 300 400 500 t a =25 pulsed t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =25 pulsed -20 -0.3 -3 v sd i s ?? source current i s (a) source to drain voltage v sd (v) v gs =-2.0v v gs =-1.5v v gs =-4.5v,-4.0v,-3.5v,-3.0v,-2.5v output characteristics drain current i d (a) drain to source voltage v ds (v) CJ2305 v gs =-1.8v v gs =-2.5v v gs =-4.5v on-resistance r ds(on) (m ) drain current i d (a) t a =25 pulsed t a =25 pulsed i d =-3.3a i d r ds(on) ?? v gs r ds(on) ?? on-resistance r ds(on) (m ) gate to source voltage v gs (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2011
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